| PART |
Description |
Maker |
| Q67040-S4274 Q67040-S4276 Q67040-S4275 SGW15N120 S |
Fast S-IGBT in NPT-Technology
Fast IGBT in NPT-technology 在不扩散核武器条约快速IGBT技
IGBTs & DuoPacks - 15A 1200V TO220AB IGBT
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| SKA06N60 |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT)
|
SIEMENS AG
|
| SGW10N60 SGB10N60 |
Fast S-igbt in Npt-technology
|
Infineon Technologies Corporation
|
| SGP30N6009 |
Fast IGBT in NPT-technology
|
Infineon Technologies AG
|
| SGD02N120 SGP02N120 SGB02N120 SGI02N120 |
Fast S-IGBT in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
| SGW02N120 |
Fast IGBT in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
| SKW20N60 Q67040-S4242 |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
INFINEON[Infineon Technologies AG]
|
| SKW25N12008 |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
Infineon Technologies AG
|
| SGB30N6009 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGP02N12007 SGP02N120 SGD02N120 SGI02N120 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB07N120 SGB07N12007 |
Fast IGBT in NPT-technology lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB04N60 SGB04N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
